Abstract
The polarizability and diamagnetic susceptibility values of a shallow donor in Si are computed. These values are obtained for the cases \(\bar{E}\parallel \bar{B}\) and \(\bar{E}\, \bot \,\bar{B}\). The anisotropy introduced by these perturbations are properly taken care of in the expressions derived for polarizability and magnetic susceptibility. Our results show that the numerical value of the contribution from electric field to diamagnetic susceptibility is several orders smaller than that of the magnetic field effect. Polarizability values are obtained in a magnetic field by two different methods. The polarizability values decrease as the intensity of magnetic field increases. Using the Clausius–Mossotti relation, the anisotropic values of the refractive indices for different magnetic fields are estimated.
Published Version
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