Magnetic domain writing defined by electrical gating in Pt/Co film

Abstract

There is a need to control magnetic properties at a desired location in a magnetic film towards a realization of fundamental devices, such as domain wall logic or magnonic applications. Here, we demonstrate the formation of a magnetic domain structure at a desired location in a Pt/Co film, using electrical gating with a meshed gate electrode and sweeping the applied magnetic field. As the magnetic properties can be changed by modulating the electron density at the surface of the Co layer, this method in principle provides higher speed and power-efficient operation in inducing a nanoscale domain structure or in configuring a volatile magnonic crystal.