Abstract
Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
