Abstract

Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.

Highlights

  • Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories

  • 45- domain walls can be formed between the junctions

  • the wire arms depending on the thickness of the device

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Summary

Magnetic domain wall engineering in a nanoscale permalloy junction

Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. We study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. The magnetoresistive random access memory (MRAM) based on the tunneling magnetic resistance (TMR) effect has the potential to replace all existing memory devices in a computer or other hard disk drives as it could provide a high read/write operation speed and is nonvolatile.. Compared with the TMR-based MRAM devices, a domain wall motion-based magnetic junction could have a single layer structure, which might have great advantages in terms of fabrication and application.. The micromagnetic simulations are performed using the standard micromagnetic simulator OOMMF software, which stands on the Landau-Lifshitz-Gilbert equation

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This work was supported by State Key Program for
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