Magnetic dead layers in NiFe/Ta and NiFe/Si/diamond-like carbon films

Abstract

NiFe, Ta films were fabricated by ion beam deposition (IBD) and diamond-like carbon (DLC) films by ion beam chemical vapor deposition (IB-CVD) and filtered cathodic arc (FCA) process. Magnetic dead layers at interfaces of Ta/NiFe/Tn and NiFe/Si/DLC trilayer films were determined by characterizing magnetic flux loss using a B–H loop tracer. Dependence of magnetic dead layer on ion beam voltage and thicknesses of Ta, DLC, and Si layers was investigated. It is found that the thickness of magnetic dead layer increases monotonously with increasing ion beam voltage for Ta and DLC film depositions. The magnetic dead layer of 4–6 Å thick forms at Ta/NiFe and NiFe/Ta interfaces at an ion beam voltage of 1000 V, which can be attributed to the atomic intermixing of incoming energetic adatoms with atoms of grown films at interfaces. Direct ion beam deposition of the DLC film in NiFe/Si/DLC layered structure gives rise to a magnetic thickness loss of 12–18 Å. Transmission electron microscopy cross-sectional observations have confirmed the formation of an amorphous-like interfacial layer, as a result of carbonization or silicidation of NiFe at interfaces of the trilayer film.