Magnetic-anisotropy-induced spin blockade in a single-molecule transistor

Abstract

We present a mechanism for a spin blockade effect associated with a change in the type of magnetic anisotropy over oxidation state in a single molecule transistor, by taking an example of an individual ${\mathrm{Eu}}_{2}{({\mathrm{C}}_{8}{\mathrm{H}}_{8})}_{3}$ molecule weakly coupled to nonmagnetic electrodes without linker groups. The molecule switches its magnetization direction from in-plane to out-of-plane when it is charged. In other words, the magnetic anisotropy of the molecule changes from easy plane to easy axis when the molecule is charged. By solving the master equation based on a model Hamiltonian, we find that current through the molecule is highly suppressed at low bias independently of gate voltage due to the interplay between spin selection rules and the change in the type of magnetic anisotropy. Transitions between the lowest magnetic levels in successive charge states are forbidden because the magnetic levels differ by $|\mathrm{\ensuremath{\Delta}}M|>1/2$ due to the change in the type of magnetic anisotropy, although the total spins differ by $|\mathrm{\ensuremath{\Delta}}S|=1/2$. This current suppression can be lifted by significant $\mathbf{B}$ field, and the threshold $\mathbf{B}$ field varies as a function of the field direction and the strength of magnetic anisotropy. The spin blockade effect sheds light on switching the magnetization direction by non-spin-polarized current and on exploring effects of this property coupled to other molecular degrees of freedom.