Abstract
The authors investigate the magnetic and transport behaviors of Ge1−xMnxTe thin films with high Mn composition (x=0.98) grown by solid-source molecular-beam epitaxy. The temperature-dependent magnetization (M-T) gives a Curie paramagnetic temperature θp∼120K, in contrast to the Curie temperature of TC∼95K obtained from the Arrott plot and temperature-dependent resistivity measurement. The resistivity and M-T behaviors can be attributed to weak localization effect of disordering. The authors discussed the ferromagnetism in Ge0.02Mn0.98Te on the basis of the Ruderman-Kittel-Kasuya-Yoshida interaction and clustering effect.
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