Abstract
Eighty nano meters thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g. Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.
Highlights
Article: Wu, Haokaifeng, Vallejo Fernandez, Gonzalo orcid.org/0000-0002-4826-1547 and Hirohata, Atsufumi orcid.org/0000-0001-9107-2330 (2017) Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures
The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the an
This is almost a half in full width half maximum (FWHM) as compared with the other samples, such as those grown at 523 K (FWHM= 1.27o)
Summary
This content has been downloaded from IOPscience. Please scroll down to see the full text. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the an. The ce total spin moment decreases by the substitution and the alloy becomes almost an ideal half-metallic compensated ferrimagnet or antiferromagnet which has advantages for realistic spintronic applications. These two magnetic materials can be differentiated as the ferrimagnet shows an intrinsic magnetic moment except in the vicinity of the compensation temperature, while the antiferromagnet.
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