Abstract
In this paper, we report on pulsed laser deposition of n-type Cu-doped ZnO thin films on c-plane sapphire substrates at 700°C. XRD and HRTEM were employed to study the epitaxial growth relationship between the Zn1−xCuxO film and sapphire substrate. Absorption measurements showed excitonic nature of the thin films and a decrease in the bandgap energy with increased Cu concentration was observed. Such as-deposited films showed room temperature ferromagnetism with Curie temperature (Tc) at around 320 K. The moment per Cu atom decreases as the Cu concentration increases. The largest magnetic moment about 0.81μB/Cu atom was observed for Zn0.95Cu0.05O thin films. The presence of any magnetic second phase was ruled out and the ferromagnetism was attributed to Cu ions substituted directly into the ZnO lattice.
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