Abstract
This study reports on the deposition of highly transparent, n-type ZnO thin films on glass substrate at 450 °C using spray pyrolysis processing, with the simultaneous insertion of yttrium (Y) at different percentages (0, 2, 5, 7 at%) as a dopant. The effect of Y doping on the structure, morphology and optical properties of Y doped ZnO (ZnO:Y) was investigated for optoelectronic applications. The obtained thin films were characterized by means of X-ray diffraction, field-emission scanning electron microscopy (FESEM), UV–visible absorbance measurements, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. The as-prepared films exhibit well-defined hexagonal wurtzite structure grown along [002]. Field emission scanning electron microscope micrographs of the pure ZnO and ZnO:Y showed that the films acquired a dominance of hexagonal-like grains, the morphology was influenced by Y incorporation. All the films showed high transparency in the visible domain with an average transmittance of 83%. The band gap energy, Eg, increased from 3.12 eV to 3.18 eV by increasing the Y doping concentration up to 5 at% and then decreased to 3.15 eV for 7 at% Y content. The PL and CL measurements reveal a strong ultraviolet (UV) emission, suggesting that the as-prepared ZnO:Y thin films can potentially be used in optoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
