Abstract
Thin films of FeCuNbMoSiB have been sputtered on Corning glass substrates with thicknesses varying from 10 to 200 nm with post annealing at 450 °C and 550 °C. Annealing in the presence of the magnetic field applied along the plane of a substrate develops an uniaxial magnetic anisotropy with the in-plane easy axis. Estimation of the effective anisotropy constant from the magnetization measurements gave Keff = 3.23 kJ/m3. Structure and surface of the films were investigated with the X-ray powder diffraction (XRD), resistivity measurements, and Raman spectroscopy. XRD and resistivity analyses show that thermal annealing at 550 °C improves the crystalline fraction and Fe-Si grain size. Raman spectra identified hematite, goethite, magnetite, as well as graphite contamination of film surfaces.
Published Version
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