Abstract
Polycrystalline CdCr2Se4 thin films with a thickness of 6–10 µm were synthesized by vacuum deposition and subsequent heat treatments on silicon and insulating substrates. N-type CdCr2Se4 films were also obtained through a heat treatment in the indium vapor. Magnetic properties such as the Curie and Curie-Weiss temperature, the saturation magnetization, and the line width of ferromagnetic-resonance absorption, were measured. For samples subjected to a reverse vapor transport process, their magnetic properties are close to those of bulk crystals. Electrical properties of n-type thin films on insulating substrates have temperature dependence different from that of bulk crystals. Their negative magnetoresistance has a maximum at temperatures much lower than Tc. The longitudinal magnetoresistance effect is larger than the transverse effect. The results are discussed in relation with the available models.
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