Abstract
Magnetic and electrical properties in amorphous Ge–Se–Fe, Ge–Fe, and Se–Fe films prepared by rf-sputtering have been studied. The Ge–Se–Fe films exhibit paramagnetic and ferromagnetic resonances in the composition ranges with low and high Fe content respectively, and exhibit variable range hopping conduction for paramagnetic films and metallic conduction for ferromagnetic films. The films with intermediate Fe content behave in a manner intermediate between semiconductive and metallic conduction. Similar results are also found in the Ge–Fe and Se–Fe films except for the absence of paramagnetic resonance signals in the range with low Fe content.
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