Abstract
Amorphous GeSeFe films prepared by r.f. sputtering have shown paramagnetic, and ferromagnetic properties for the films with low and high Fe content, respectively. The temperature dependence of the electrical conductivity has indicated the variable range hopping conduction for the paramagnetic films and the metallic conduction for the ferromagnetic films. The films with intermediate Fe content have behaved intermediate between semiconductive and metallic conduction. These films are likely to be antiferromagnetic.
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