Abstract
Mg doping for metalorganic chemical vapor deposition of Ga 1− x Al x As, using octamethyldialuminummonomagnesium (an adduct of trimethylaluminum and dimethylmagnesium), was studied as a function of Al composition and growth conditions. The Mg incorporation efficiency increased with decreasing growth temperature, and the maximum concentration was as high as 2.3 × 10 20 cm -3 at a growth temperature of 700°C for GaAs. An increase in Mg incorporation efficiency was seen with increasing Al composition, suggesting less Mg re-evaporation from the growing surface for layers with higher Al compositions. The limiting maximum attainable concentration values seemed to reach the same value, independent of Al composition. Long doping transients, as reported in the literature, were not observed. The doping response was essentially unchanged independent of Al composition.
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