Abstract
We have studied the deep levels in the lattice-matched InP/(InAlGa)As heterojunction system. Five p-n junction samples were grown by metalorganic chemical vapor deposition with varied Al composition of 0%, 16%, 36%, 45%, and 55%. A vacancy-related deep electron trap was found at the InP/(InAlGa)As interface. This trap has less concentration in the sample with higher Al composition, and is not observed when Al composition is greater than 55%. Its activation energy within the band gap increases with the increasing Al composition. The trap can be eliminated by rapid thermal annealing at 700 °C. Current-voltage characteristics show that this trap acts as recombination centers under forward bias condition.
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