Abstract
We present Mg-doped InSbN layers on n-type InSbN/InSb structures by both direct Mg ion implantation and electron beam evaporation of Mg followed by rapid thermal diffusion. Both kinds of samples show the p-n junction behaviour at low temperature, indicating the p-type conduction of the Mg doped InSbN layers and the conduction follows a multi-layer structure model. In addition, Hall results also show that both kinds of samples show temperature dependent mobility but with different dependences due to different dominant scattering mechanisms related to fabrication technique.
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