Abstract
Magnesium has been used as p dopant for the base in heterojunction bipolar transistors during growth by metalorganic vapor phase epitaxy. Very sharp and well controlled Mg profiles were achieved resulting in excellent dc‐characteristics of the device. With a layer sequence suitable for high frequency applications, the transistors show a common emitter current gain of about 100 with very weak dependence on collector current, low offset voltage, low output conductance, and high breakdown voltage.
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