Abstract
This study reports the preparation of maghemite (γ-Fe2O3) thin films, using atmospheric-pressure plasma annealed with axial N2 (purity = 99.9%) for 3–25 min. The obtained γ-Fe2O3 thin film had three broad Raman active modes at 350, 500, and 700 cm−1. The surface had an irregular, rough, and faceted morphology when the γ-Fe2O3 phase was formed. Direct and indirect optical bandgaps of the γ-Fe2O3 thin film were 2.22–2.30 and 1.32–1.57 eV, respectively, and the resistivity was 4.6–369.9 Ω cm, significantly lower than previously reported. The thin-film carrier concentrations were from 9.13 × 1014 to 2.83 × 1019 cm−3. Thus, atmospheric-pressure plasma annealing offers an effective shortened annealing time to prepare γ-Fe2O3 thin films.
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