Abstract

Capacitance–voltage ( C– V) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO 2 layer. The C– V curve and the EFM image showed that the Si-NCs embedded in the SiO 2 layer experienced charging effects. The macroscopic surface charge density determined from the C– V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer.

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