Abstract
Macroporous silicon light trapping layers on the surface of p-type substrates were manufactured by using electrochemical etching. Optical measurements have shown the decreased optical reflection as compared to bulk silicon. The p-n junction was formed by phosphorus diffusion from phosphosilicate glasses. Scanning Kelvin Force Microscopy technique was used to determine the location of p-n junction in samples with porous silicon layers.DOI: http://dx.doi.org/10.5755/j01.ms.21.1.5725
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