Abstract
Scanning tunneling microscopy (STM) is a key characterization technique that allows for visualization of specific features at nanostructures, given its ability to reveal changes in local charge densities in doping or defective sites. Besides the experimental acquisition of STM data from real samples, there is the theoretical route, which allows for STM images simulation from ab-initio calculations on defined nanostructures. This work presents an alternative route for theoretical STM image prediction by means of Machine Learning (ML) methods, based on the training of deep convolutional neural networks using simulated STM data. The ML-based STM predictions for defective, B- and N-doped graphene quantum dots are compared to ab-initio STM simulations, in terms of accuracy of structural rearrangements, charge density localizations, and computational resources requirements. The results demonstrate that STM images predicted by ML-methods are accurate at doping sites, whereas they show good similarity to simulations of large structural vacancies. This work represents a novel alternative for the use of ML methods in image-based characterization routines of doped/defective graphene, and potentially, for other 2-dimensional nanomaterials.
Published Version
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