Abstract
ABSTRACT Machine learning-based prediction of the output characteristics of a negative capacitance (NC) double gate (DG) Tunnel FET (TFET) (NC DG TFET) has been demonstrated in this paper. On current (ION), OFF current (IOFF) and sub-threshold slope (SS) have been predicted for different values of the body thickness (TSi), oxide thickness (TOX) and channel length (LCh) and the work function (WF). Random Forest Regression (RFR) model is used in the ML framework to explore the device characteristics. A total of 5444 simulated data has been generated by using the SILVACO ATLAS tool. After pre-processing the data, RFR-ML has been applied to obtain maximum accuracy. Root means square error (RMSE) (~0.34), R2 score (~0.965) and accuracy (~98.51%) parameter have been used as the figures of merit (FOM) to judge the efficiency of the proposed model with respect to the state-of-the-art literature. Besides, with higher accuracy, the model is capable of predicting the data within a few seconds compared to the few hundred hours using TCAD tools. This fast and accurate design strategy will surely be efficacious for the present VLSI industries.
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