Abstract
AbstractOptically active point defects in SiC are attracting a growing interest thanks to their prospect of emission in the near‐infrared (NIR) spectral region (application in optical fiber communications and for in vivo imaging) and also thanks to the possibility to control optically their spin. Most of the results have been obtained for the hexagonal SiC polytypes. In this work, we focus on the optical properties of point defects in the 3C‐SiC polytype after ion implantation. Different ions, fluences and post‐implantation annealing were performed to optimize the defect formation. Photoluminescence results show that the optimal conditions for intense D1 defect related PL emission in the 600‐850 nm range are high temperature annealing (up to 1200 °C) and a displacement density not exceeding 1020 cm‐3 at the projected range. The creation of Ky5 defect at 1.12 eV has also been demonstrated for lower temperature annealing (800 °C). (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
