Abstract
Novel experimental approach to investigate lateral migration of point defects in Si induced by ion implantation has been proposed. The point defects induced by localized irradiation using a focused Si ion beam with an energy of 60 keV were monitored by deep level transient spectroscopy while changing the separation among a number of line-shaped irradiated regions. A result of the experiment that the defect formation is suppressed at a smaller separation is explained by the lateral migration of self-interstitials and annihilation with vacancy-type defects. The migration distance of the interstitials is also evaluated quantitatively and discussed in comparison with the trap-limited-diffusion model.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
