Luminescence study of C, Zn, Si, and Ge acceptors in GaAs

Abstract

Selective pair luminescence has been used to measure the exicted states of the shallow acceptors C, Zn, Si, and Ge in GaAs. Data for Ge are presented here for the first time while the sets of excited state energies of C, Zn, and Si are completed. These results show that the energies of the p-symmetric impurity states are influenced by the impurity potentials. The germanium excited states are found to be shifted by 3 meV with respect to the valence band compared to the corresponding states in C, Zn, and Si.