Abstract
Selective pair luminescence (SPL) has been used to measure the excited states of shallow acceptors in undoped vapor-phase epitaxial (VPE) grown GaAs and Mg-implanted VPE GaAs. A set of experimental data for Mg excited states in GaAs is presented here. The results show that the 2P3/2 -, 2S3/2 -, and 2P5/2 -1S3/2 energy differences are 17.0, 20.0, and 21.0 meV, respectively. The value of the 2S3/2 state agrees very well with the previously reported two-hole transition luminescence result, and the other two values for the excited states agree very well with those reported for far-infrared Fourier transform spectroscopy. This assignment was further confirmed by making SPL measurements on Mg-implanted GaAs.
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