Luminescence properties of semiconductor quantum dots

Abstract

Semiconductor quantum dot (QD) heterostructures created using self-ordering phenomena on crystal surfaces exhibit luminescence properties predicted for zero-dimensional systems, e.g. ultrasharp luminescence lines up to high temperatures, giantly increased material gain and practically complete temperature insensitivity of the laser threshold current. Faster than expected exciton capture and energy relaxation processes manifest minor role of the so-called phonon bottleneck effect. Formation of QDs with properties satisfying device requirements became possible.