Abstract
Summary form only given. The growth and study of self-assembled quantum dots in semiconductors commonly occurs in circumstances where a large lattice mismatch between the constituent materials drives the layered system to form a high density of quantum dots (QD) along a well defined plane (e.g. in the InAs/GaAs system). The case of smaller lattice mismatch is also of contemporary interest since the QD formation in this instance proceeds via a different energetic pathway, leading to a potentially wide range in the control of the QD size, shape, and density. Such tuning of quantum dots in wide bandgap semiconductors, in turn, is of potential interest in designing submicron scale high efficiency green and blue light emitters.
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