Abstract
We report the polarization spectra obtained from strained In x Ga 1- x As/GaAs quantum wells. They reflect two important microscopic properties: first, the spin relaxation of the photo-excited holes is incomplete during recombination; second, the spin relaxation of the photo-generated carriers is not affected by the initial electron-hole correlations. We undertake a discussion concerning the relative probabilities of the different hole relaxation processes which leads us to suggest that the prime cause of spin depolarization of photo-generated holes out of k → = 0, is the intra-band hole/acoustic phonon scattering, via piezo-electric coupling.
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