Abstract
Recent progress on luminescence of excitons in semiconductors is illustrated with two examples. Firstly, intrinsic exciton-polariton recombination is analyzed, stressing the importance of various parameters such as polariton velocity, transmission coefficients and distribution functions. Secondly, in the case of man-made ultrathin multilayer structures, we discuss the use of exciton luminescence to analyse crystal growth and specific 2-D electronic features.
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