Abstract
In GaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes (LEDs) were grown by metal-organic vapor phase epitaxy (MOVPE). Band-gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon while increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.
Published Version
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