Abstract
Er3+-doped glass matrix containing semiconductor CdS quantum dots was prepared by melt-quenching and subsequent heating. Transmission electron microscopy analyses evidenced that the material consists of an amorphous silica network and abundant separated 2–5 nm CdS quantum dots. Photoluminescence and photoluminescence excitation spectra demonstrated the existence of energy transfer from the CdS quantum dots to Er3+ ions although the transfer efficiency was low.
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