Abstract
Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic centre involved is a Si-As-Si complex with the Si-Si axis along [1-10].
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