Abstract
Photoluminescence (PL) in the blue wavelength region originating from a no-phonon (NP) transition at 2.734 eV and longitudinal optical (LO) phonon sidebands of Te isoelectronic centers (ICs) were clearly resolved after thermal annealing by δ-doping of Te in ZnSe layers. Broad luminescence (conventionally called the S1 band) had been previously observed in this region (i.e., around 2.65 eV). The PL intensities of the NP line and the phonon replicas followed a Poisson distribution with a mean phonon number (Huang–Rhys factor) of S∼1.1. This indicates that the broadening of the 2.65 eV emission band is due to the superposition of the NP lines and their LO phonon replicas originating from the Te ICs with slight variations in their transition energies. The origin of the luminescence is discussed in relation to linearly polarized PL measurements.
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