Abstract
The purpose of this work is a detailed comparison of selected luminescence and lock-in thermography (LIT) results on one exemplary sample and to draw corresponding conclusions. Our focus is on solar cells, but also some investigations on wafers will be discussed. The comparison will help to decide which characterization tools are needed to solve technological problems. It will be demonstrated that luminescence imaging may widely replace LIT with respect to the analysis of recombination-active bulk defects, cracks, series resistances, and junction breakdown sites. However, some important investigations can be done only by LIT. LIT allows for a quantitative analysis of different kinds of leakage currents both under forward and under reverse bias enabling a reliable analysis of local IV characteristics. It is shown that LIT and luminescence imaging are complementary to each other and should be used in combination.
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