Abstract
Near band edge photoluminescence has been obtained from Si 1− y C y quantum well (QW) and neighboring Si 1− x Ge x /Si 1− y C y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si 1− x Ge x layer has been observed from neighboring Si 1− x Ge x and Si 1− y C y DQW structures.
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