Abstract
We report on the generation of radiative defects, the so-called color centres, in 25 keV He irradiated and thermally oxidized 4H–SiC <0001> surface investigated by photoluminescence spectroscopy utilizing 266 nm deep-UV excitation. Ion irradiation showed the generation of photoluminescent peaks ascribed to silicon vacancies (VSi) and unknown defect-related bands (UD3 and UD4). Thermal treatment (200–800 C) resulted in a significant increase of luminescence at an optimal temperature, depending on the initial density of emitters. While thermal oxidation resulted in several other high-brightness color centres, emitting photons even at room temperature. In addition to the defects in the crystalline 4H–SiC lattice, the difference in photoluminescence after oxidation indicates the presence of various other complex surface and interfacial defects.
Published Version
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