Abstract
The luminescence from Er-doped thin films is studied in two different systems. The first one is a SiO single layer. The second one is a SiO∕SiO2 multilayer allowing us to obtain size-controlled silicon nanocrystals. In both systems, the annealing-temperature dependence of the luminescence is investigated. It is shown that the optimal annealing temperatures are equal to 700 and 1050°C for the single layer and the multilayer, respectively. Moreover the luminescence efficiency at 1.5μm is one order of magnitude higher in the single Er-doped SiO layer. These results are discussed in relation to the formation of silicon nanoparticles with annealing treatments.
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