Abstract
The authors present time resolved photoluminescence studies of the 621nm emission of Eu doped GaN in the form of a powder. The authors also show light guiding on chip using SiON waveguides in conjunction with the GaN powder. The Eu luminescence shows two distinct temperature dependent behaviors of the lifetime when excited above the GaN band gap, one at 185K and one at 104K, with corresponding activation energies of 16 and 9meV, respectively.
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