Abstract
In this paper, undoped, Mg‐ and Zn‐doped gallium nitride powders were prepared by direct nitridation of Ga2O3 under a flowing NH3 gas. The phase purity, morphology and cathodoluminescence spectra were presented. The Ga2O3 powders can be completely nitridized to GaN at 1000°C. The resultant GaN powders agglomerated together with submicron‐sized polyhedral crystals. At room temperature, the Mg‐ and Zn‐doped powders exhibit bright blue‐violet emission at around 3.05 and 2.81 eV, respectively. This provides clear evidence that magnesium or zinc is incorporated into the GaN powders as an acceptor and suggests that the luminescent materials are promising candidates for optoelectronic applications.
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