Abstract
Y 2 O 3 : Eu 3 + and Y1.35Gd0.6O3:Eu3+ luminescent thin films were grown on Al2O3 (0001) and Si (100) substrates by a pulsed-laser deposition technique. Both films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence of the films are highly dependent on the deposition conditions. The structural characterization carried out on the films grown on both substrates at the substrate temperature of 600°C and oxygen pressure of 200mTorr indicated that films were preferentially (222) oriented. In particular, the surface roughness of the thin films had a strong effect on the photoluminescence. The incorporation of Gd into the Y2O3 lattice induced a change of crystallinity, surface roughness, and a remarkable increase of photoluminescence. Due to a D05-F27 transition of Eu3+, the Y1.35Gd0.6O3:Eu3+ films emitted the radiation of red light with a 612-nm wavelength, whose brightness was increased by a factor of 3.1 in comparison with that of Y2O3:Eu3+ films.
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