Abstract
Gd-substituted Y1-xGdxVO4:Eu3+ luminescent thin films have been grown on Al2O3(0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from Y1-xGdxVO4:Eu3+ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than the crystallinity of the films. In particular, the incorporation of Gd into the YVO4 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y0.57Gd0.40Eu0.03VO4 thin film whose brightness was increased by a factor of 2.5 and 1.9 in comparison with that of YVO4:Eu3+ and GdVO4:Eu3+ films, respectively. This phosphor have application to flat panel displays.
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