Abstract
We have studied the anisotropy of the photoluminescence (PL) of InGaP films grown by liquid phase epitaxy on GaAs substrates. The PL measurements were performed in a wide temperature range (4–250 K) and exciting power density range for polarizations of the emitted radiation along the [011] and [] directions. It was found that the donor–acceptor transition dominates at low temperature (4 K) while the band-to-band transition dominates at a higher temperature (250 K). The dependence of PL intensity on excitation intensity shows a characteristic behaviour for donor–acceptor recombination. The difference in the position of the spectral peak for [011] and [] polarizations is a result of the splitting of the valence-band into heavy- and light-hole bands due to strain. Moreover, the difference in the line shape of the spectra for different polarizations indicates the presence of anisotropy for different crystallographic directions.
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