Abstract
We present experimental and theoretical results on the low temperature luminescence intensity of dry etched GaAs-AlxGa1−x As quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1µm to 60nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The extrinsic effect, which we include in our interpretation of the luminescence intensity, involves carrier diffusion with a surface nonradiative recombination velocity. The combined effect (intrinsic and extrinsic) gives a good fit to our data. The surface recombination velocity needed for the fit was ~105cm/s. Raman studies of quantum dot arrays showed enhanced surface phonons with the decrease of the nanostructure sizes. “GaAs”-like and “AlAs”-like surface phonons were also observed for the first time in etched nanostructures, in good agreement with theoretical predications.
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