Abstract
Photoluminescence and optical absorption have been observed from GaP implanted with nitrogen to a concentration of 10 19 cm 3 . Both sets of measurements indicate a N substitutional concentration of 2 to 4 × 10 18 cm 3 , after annealing at 800–900°C. Luminescence from pairs of N atoms, anticipated for concentrations above 10 18 cm 3 , is observed. Lattice damage or strain, which is not entirely eliminated by annealing at 900°C, is revealed by the broadening of spectral lines and enhanced intensity in normally weak transitions. The luminescence intensity is ⩽ 1 per cent of that obtained from conventionally-doped samples of comparable N concentrations.
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