Abstract
The nuclear reaction and optical absorption techniques have been developed to determine the absolute nitrogen doping concentration in GaP crystals/1/.In both cases the data measured are averaged over the doped layer and these methods do not permit to obtain the nitrogen doping profile across the layer.In this work the measurement of the nitrogen concentration in GaP LED structures is carried out with high spatial resolution by using the local cathodoluminescence (CL) data obtained in the scanning electron microscope (SEM).The method is based on determining in CL spectra the degree of the A-line self-absorption by substitutional nitrogen in GaP crystal.lt has been shown recently /2/ that in the temperature range of 77°K - 130°K without self-absorption the peak intensities ratio of A-line and its phonon replication side bands A-LO and A-2L0 in luminescence spectra of GaP should correspond to 1,00 : 0,36 : 0,065.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
