<title>Wide-bandgap materials for novel electronic devices and MEMS</title>

Abstract

Silicon has been the leading material suited for the manufacture of a broad range of electronic, sensor, and actuator applications. However, it is limited in electronic device performance to temperatures below 250 degrees C and in mechanical device performance to below 600 degrees C. Its dim optical properties put silicon at a disadvantage with respect to the much acclaimed compound semiconductor rivals that have orders of magnitude higher optical emission. Consequently, for high-temperature MEMS applications, there is a need for semiconductors with good mechanical and thermal stability, and a wide bandgap for stable electronic and optoelectronic properties at elevated temperatures. This paper present a review of research activities on III-V nitrides and their experimentally established properties. We explore their suitability for microelectronics and microelectromechanical systems. Current efforts in developing III-N nitrides to extend the Si-based MEMS technology to applications in harsh environments is discussed. A summary is presented of the material properties that make them attractive for use in such environments. Challenges faced in crystal growth and development of processing techniques are also examined. Finally, a review is presented of the current state of novel optoelectronic devices made, and potential MEMS devices to be made from the proposed semiconductors, as well as an examination of issues facing future progress.