Year-end Sale % OFF 
Abstract
The preparation and radiometric properties of silicon detectors coated with fluorescent thin films are described. The films are deposited from solutions of clear plastics, such as acrylic resins, polyvinyl toluene or polystyrene, and of organic laser dyes in a common solvent. They are optically clear, mechanically and chemically stable, yet easily applied and removed. Multiple doped films of a few microns thickness exhibit broad-band absorption from less than 250 nm to about 450 nm and narrow band emissions with peaks ranging from 380 nm to 600 nm. Internal quantum efficiencies are close to 100 percent and fluorescence decay times are in the nanosecond range. When deposited on optically denser media, a large fraction of the fluorescent emission is trapped in the substrate. Silicon photodiodes coated with multiple doped films exhibit high external quantum efficiencies and virtually flat photon response in the near UV.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
