<title>The studies of RT electrical resistivities of LaNiO<formula><inf><roman>3-δ</roman></inf></formula>thin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures</title>

Abstract

Electrically conductive LaNiO_3-δthin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La₂NiO₄ and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.